BULK128D Datasheet | STMicroelectronics

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. SOT-82 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C St orage Temperature Max. Operating Junction Temperature Value 700 400 9 4 8 2 4 55 -65 to 150 150 Uni t V V V A A A A W o o December 1997 1/7 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 2.27 80 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) Symb ol I CES I CEO Parameter Collector Cut-off Current (V BE = -1.5 V) Collector-Emitter Leakage Current (I B = 0) Emitter-Base Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain Forward Voltage Drop RESISTIVE LO AD Storage Time BULK128D-A BULK128D-B Fall T ime INDUCTIVE LOAD Storage Time F all Time Test Cond ition s V CE = 700 V V CE = 700 V V CE = 400 V Tj = 125 o C Min. Typ . Max. 100 500 250 Un it µA µA µA V EBO V CEO(sus) V CE(sat )∗ I E = 10 m A I C = 100 m A I C = 0.5 A IC = 1 A I C = 2.5 A I C = 0.5 A IC = 1 A I C = 2.5 A I C = 10 m A IC = 2 A If = 2 A V CC = 250 V I B1 = 0.4 A T p = 30 µ s (see fig. 2) V Cl = 200 V I B1 = 0.4 A R BB = 0 Ω (see fig. 1) IC = 2 A I B2 = -0.4 A L = 25 m H IB = 0.1 A IB = 0.2 A IB = 0.5 A IB = 0.1 A IB = 0.2 A IB = 0.5 A V CE = 5 V VCE = 5 V 9 400 0.7 1.0 1.5 1.1...