BUT30V Datasheet | STMicroelectronics

® BUT30V NPN TRANSISTOR POWER MODULE s NPN TRANSISTOR s HIGH CURRENT POWER BIPOLAR MODULE s VERY LOW Rth JUNCTION CASE s SPECIFIED ACCIDENTAL OVERLOAD AREAS s FULLY INSULATED PACKAGE (U.L. PLIANT) FOR EASY MOUNTING s LOW INTERNAL PARASITIC INDUCTANCE APPLICATIONS: s MOTOR CONTROL s SMPS & UPS s WELDING EQUIPMENT Pin 4 not connected ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter VCEV Collector-Emitter Voltage (VBE = -5 V) VCEO(sus) Collector-Emitter Voltage (IB = 0) VEBO Emitter-Base Voltage (IC = 0) IC Collector Current ICM Collector Peak Current (tp = 10 ms) IB Base Current IBM Base Peak Current (tp = 10 ms) Ptot Total Dissipation at Tc = 25 o C Visol Insulation Withstand Voltage (RMS) from All Four Terminals to External Heatsink Tstg Storage Temperature Tj Max. Operating Junction Temperature February 2003 Value 200 125 7 100 150 20 30 250 2500 -55 to 150 150 Unit V V V A A A A W o C o C 1/7 THERMAL DATA Rthj-case...