BUT30 Datasheet | STMicroelectronics

BUT30V NPN TRANSISTOR POWER MODULE s s s s s s s NPN TRANSISTOR HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE Pin 4 not con nected APPLICATIONS: s MOTOR CONTROL s SMPS & UPS s WELDING EQUIPMENT ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEV V EBO IC I CM IB I BM P t ot T stg Tj V ISO July 1997 Parameter Collector-Emitter Voltage (V BE = -5 V) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp = 10 ms) Base Current Base Peak Current (t p = 10 ms) Total Dissipation at T c = 25 o C St orage Temperature Max. Operating Junction Temperature Insulation W ithstand Voltage (AC-RMS) Value 200 125 7 100 150 20 30 250 -55 to 150 150 2500 Uni t V V V A A A A W o o V CEO(sus) Collector-Emitter Voltage (I B = 0) V 1/7 BUT30V THERMAL DATA R t hj-ca se R thc -h Thermal Resistance Junction-case Thermal Resistance Case-heats ink With Conductive Grease Applied Max Max 0.5 0.05 o C/W C/W o ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) Symb ol I CER I CEV I EBO Parameter Collector Cut-off Current (R BE = 5 Ω ) Collector Cut-off Current (V BE = -5V) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = V CEV V CE = V CEV V CE = V CEV V CE = V CEV V EB = 5 V I C = 0.2 A L = 25 m H V c la mp = 125 V I C = 100 A IC IC IC IC IC IC IC IC = = = = = = = = 50 A 50 A 100 A 100 A 50 A 50 A 100 A 100 A V CE = 5 V IB IB IB IB IB IB IB IB = = = = = = = = 2.5 A 2.5 A 10 A 10 A 2.5 A 2.5 A 10 A 10 A T j = 100 C T j = 100 C T j = 100 C T j = 100 C 270 o o o o Min. Typ . Max. 1 5 1 4 1 Un it m A m A m A m A m A V T j = 100 C T j = 100 C o o V CEO(SUS) - Collector-Emitter Sustaining Voltage h FE∗ V CE(sat )∗ DC Current G ain Collector-Emitter Saturation Voltage 125 27 0.45 0.55 0.7 0.9 1.15 1.1 1.45 1.55 350 2.7 2 1 0.1 0.2 125 3.5 2.5 2 0.2 0.35 0.9 1.2 0.9 1.5 1.4 1.4 1.8 1.9 V V V V...