The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
BUT30V
NPN TRANSISTOR POWER MODULE
s s s s
s s s
NPN TRANSISTOR HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE
Pin 4 not con nected
APPLICATIONS: s MOTOR CONTROL s SMPS & UPS s WELDING EQUIPMENT
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CEV V EBO IC I CM IB I BM P t ot T stg Tj V ISO July 1997 Parameter Collector-Emitter Voltage (V BE = -5 V) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp = 10 ms) Base Current Base Peak Current (t p = 10 ms) Total Dissipation at T c = 25 o C St orage Temperature Max.