STMicroelectronics BUV42
SILICON NPN SWITCHING TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
Symb ol V CEV V CEO V EBO IC I CM IB I BM P Bas e P tot T s tg Tj Parameter Collector-emitter Voltage (VBE = -1.5V) Collector-emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Base Peak Current Reverse Bias Base Dissipation (B. E. junction in avalanche) o T otal Dissipation at Tc ase ≤ 25 C Storage Temperature Max Operating Junction Temperature Valu e 350 250 7 12 18 2.5 4 1 120 -65 to 200 200 Unit V V V A A A A A W o o C C October 1995 1/5 BUV42 THERMAL DATA R thj -ca se Thermal Resistance Junction-case Max 1.46 o C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbo l I CER I CEV I EBO Parameter Collector Cut-off Current (R BE = 10 Ω) Collector Cut-off Current Emitter Cut- off Current (I C = 0) T est Con ditio ns V CE = V CEV V CE = V CEV V CE = V CEV V CE = V CEV V EB = 5 V I C = 0.2A L = 25 mH I E = 50 mA IC IC IC IC IC IC IC IC IC IC = = = = = = = = = = 2A 4A 6A 2A 4A 6A 4...