STMicroelectronics BUV46A
The devices are silicon Multiepitaxial Mesa NPN transistors in the Jedec TO-220 plastic package intended for high voltage, fast switching applications.| Part No. | BUV46A |
|---|---|
| Datasheet | BUV46A Download |
| Manufacturer |  STMicroelectronics |
| Description | HIGH VOLTAGE NPN SILICON POWER TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
GENERAL PURPOSE SWITCHING s SWITCH MODE POWER SUPPLIES s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s TO-220DESCRIPTION
INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEX V CEO V EBO IC IB P tot T stg Tj Parameter BUV46 Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (V BE = -2.5V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Base Current Total Dissipation at Tc = 25 C Storage Temperature Max. Operating Junction Temperature o Value BUV46A 1000 1000 450 7 5 3 70 -65 to 150 150 850 850 400 Unit V V V V A A W o o C C January 1999 1/4 BUV46 / BUV46A THERMAL DATA R thj-case Thermal Resistance Junction-Case Max 1.76 o C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol I CER I CEX I EBO Parameter Collector Cut-off Current (R BE = 10 Ω ) Collector Cut-off Current Emitter Cut-off Current (I C = 0) Test Conditions V CE = V CEX V CE = V CEX T C = 125 o C Min. Typ. Max. 0.1 1 0.
