| Part Number | BUV46A |
|---|---|
| Manufacturer | STMicroelectronics |
| Overview | The devices are silicon Multiepitaxial Mesa NPN transistors in the Jedec TO-220 plastic package intended for high voltage, fast switching applications. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RA. January 1999 1/4 BUV46 / BUV46A THERMAL DATA R thj-case Thermal Resistance Junction-Case Max 1.76 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CER I CEX I EBO Parameter Collector Cut-off Current (R BE = 10 Ω ) Collector Cut-off Current Emitter Cut-off Cur. |
BUV46A Datasheet
The BUV46A is a HIGH VOLTAGE NPN SILICON POWER TRANSISTORS.
| Part Number | BUV46A |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-220C package ·High voltage ·Fast switching APPLICATIONS ·General purpose switching ·Switch mode power supplies ·Electronic ballasts for fluorescent lighting PINNING PIN 1 . se specified PARAMETER BUV46 IC=0.1A ;IB=0 BUV46A BUV46 BUV46A BUV46 BUV46A BUV46 BUV46A IC=2.5A ;IB=0.5A CONDITIONS www.datasheet4u.com BUV46 BUV46A SYMBOL MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 450 VCEsat-1 Collector-emitter saturation voltage 1.5 IC=2A . |
| Part Number | BUV46A |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min.) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high. r-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current IC= 2A; IB= 0.4A V. |