STMicroelectronics BUZ11
N-Channel MOSFET
BUZ11 Specifications
- Package : TO-220
- Breakdown Voltage : 50V
- Drain-Source Resistance : 40mΩ
- Terminals : 3
- Rise Time : 200ns
- Fall Time : 110ns
- Max Power Dissipation : 75W
- Power Dissipation : 120W
- Max Operating Temp : 175°C
- Min Operating Temp : -65°C
Source:
Octopart
| Part No. | BUZ11 |
|---|---|
| Datasheet | BUZ11 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Sy mb o l P a ramet er V DS V DGR VGS ID Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 kΩ) G ate-source Voltage Drain Current (continuous) at Tc = 25 oC IDM Drain Current (pulsed) Ptot T otal Dissipat ion at Tc = 25 oC Tstg Storage Temperature Tj Max. Operating Junction Temperature DIN HUMIDITY CATEGORY (DIN 40040) IEC CLIMAT IC CAT EG ORY (DIN IEC 68-1) First digit of the datecode being Z or K identifies silicon characterized in this datasheet. July 1999 Va l u e 50 50 ± 20 33 134 90 -65 to 175 175 E 55/ 15 0/ 56 Un it V V V A A W oC oC 1/8 BUZ11 THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient Max Max 1.67 62.5 oC/W oC/W AVALANCHE CHAR...
