Datasheet4U Logo Datasheet4U.com

BUZ11 - N-Channel Power MOSFET

Key Features

  • 30A, 50V.
  • rDS(ON) = 0.040Ω.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Majority Carrier Device.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE ©2001 Fairchild Semiconductor Corporation BUZ11 Rev. C0 BUZ11 Absolute Maximum Rati.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BUZ11 N-CHANNEL MOSFET STMicroelectronics
BUZ11 Power Transistor Siemens Semiconductor Group
BUZ11 N-Channel Power MOSFET Intersil Corporation
BUZ11 N-Channel Power MOSFET ON Semiconductor
BUZ11 N-Channel MOSFET INCHANGE

Other Datasheets by Fairchild (now onsemi)

Part Number Description
BUZ71 N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Data Sheet BUZ11 September 2013 File Number 2253.2 N-Channel Power MOSFET 50V, 30A, 40 mΩ This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Formerly developmental type TA9771. Ordering Information PART NUMBER PACKAGE BRAND BUZ11_NR4941 TO-220AB BUZ11 NOTE: When ordering, use the entire part number. Features • 30A, 50V • rDS(ON) = 0.