BUZ11 Datasheet N-channel Power MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: Data Sheet BUZ11 September 2013 File Number 2253.2 N-Channel Power MOSFET 50V, 30A, 40 mΩ This is an N-Channel enhancement mode silicon gate power ﬁeld effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Formerly developmental type TA9771. Ordering Information PART NUMBER PACKAGE BRAND BUZ11_NR4941 TO-220AB BUZ11 NOTE: When ordering, use the entire part number.

Datasheet Details

Part number	BUZ11
Manufacturer	Fairchild (now onsemi)
File Size	470.27 KB
Description	N-Channel Power MOSFET
Datasheet	BUZ11-FairchildSemiconductor.pdf

Key Features

30A, 50V.
rDS(ON) = 0.040Ω.
SOA is Power Dissipation Limited.
Nanosecond Switching Speeds.
Linear Transfer Characteristics.
High Input Impedance.
Majority Carrier Device.
Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE ©2001 Fairchild Semiconductor Corporation BUZ11 Rev. C0 BUZ11 Absolute Maximum Rati.

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