STMicroelectronics BUZ11FI
N-Channel MOSFET
BUZ11FI Specifications
- Drain-Source Resistance : 40mΩ
- Min Breakdown Voltage : 50V
- Terminals : 3
- Max Power Dissipation : 40W
- Power Dissipation : 35W
- Max Operating Temp : 150°C
Source:
Octopart
| Part No. | BUZ11FI |
|---|---|
| Datasheet | BUZ11FI Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) 3 2 1 3 2 1 TO-220 ISOWATT220 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol P ar amete r VD S VDG R VGS ID IDM Ptot V I SO Tstg Tj Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 kΩ) Gate-source Voltage Drain Current (continuous) at T c = 25 oC Drain Current (pulsed) Total Dissipation at Tc = 25 oC Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature DIN Humidity Category (DIN 40040) IEC Climatic Category (DIN IEC 68-1) May 1993 Val ue BUZ11 BUZ11FI 50 50 ± 20 36 21 144 144 120 40 2000 -65 to 175 175 E 55/ 15 0/ 56 Unit V V V A A W V oC oC 1/8 BUZ11/FI THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient Max Max TO-220 1. 25 ISOWATT220 3. 75 6 2. 5 oC/W oC...
