STMicroelectronics BUZ11S2
N-Channel MOSFET
| Part No. | BUZ11S2 |
|---|---|
| Datasheet | BUZ11S2 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
APPLICATIONS
:● AUTOMATIVE POWER ACTUATORS N - channel enhancement mode POWER MaS field effect transistors. Easy drive and very fast switching times make these POWER MaS transistors ideal for high speed switching circuits in applications such as power actuator driving, motor drive including brushless motors, hydraulic actuators and many other uses in automotive applications. They also find use in DCIDC converters and uninterruptible power supplies. TO-220 ISOWATT 220 INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
VOS VOGR V GS 10M Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 K{1) Gate-source voltage Drain current (pulsed) Tc=25°C 10 - Ptot Tst9 Tj Drain current (continuous) Tc = 30°C Total dissipation at Tc <25°C Storage temperature Max. operating junction temperature DIN humidity category (DIN 40040) IEC climatic category (DIN IEC 68-1) - See note on ISOWATT 220 in this datasheet June 1988 60 V 60 V ±20 V 120 A BUZ11S2 BUZ11S2FI 30 20 A 75 35 W -55 to 150 °c 150 °c...
