BUZ11S2 Datasheet | STMicroelectronics

BUZ11S2 BUZ11S2FI - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11S2 BUZ11S2FI Voss 60 V 60 V ROS(on) 0.04 {1 0.04 {1 - 30 A 20 A - VERY LOW ON-LOSSES - LOW DRIVE ENERGY FOR EASY DRIVE - HIGH TRANSCONDUCTANCE/Crss RATIO INDUSTRIAL APPLICATIONS: - AUTOMATIVE POWER ACTUATORS - channel enhancement mode POWER Ma S field effect transistors. Easy drive and very fast switching times make these POWER Ma S transistors ideal for high speed switching circuits in applications such as power actuator driving, motor drive including brushless motors, hydraulic actuators and many other uses in automotive applications. They also find use in DCIDC converters and uninterruptible power supplies. TO-220 ISOWATT 220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS VOS VOGR V GS 10M Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 K{1) Gate-source voltage Drain current (pulsed) Tc=25°C - Ptot Tst9 Tj Drain current (continuous) Tc = 30°C Total dissipation at Tc <25°C Storage temperature Max. operating junction temperature DIN humidity category (DIN 40040) IEC climatic category (DIN IEC 68-1) - See note on ISOWATT 220 in this datasheet June 1988 ±20 BUZ11S2FI -55 to...