BUZ11S2 Datasheet and Specifications PDF

BUZ 11 S2 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 11 S2 VDS 60 V ID 30 A RDS(on) 0.04 Ω Package TO-220 .

25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 60 3 0.1 10 10 0.03 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1.

BUZ11S2 BUZ11S2FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11S2 BUZ11S2FI Voss 60 V 60 V ROS(on) 0.04 {1 0.04 {1 10 - 30 A 20 A • VERY LOW ON-LOSSES • LOW DRIVE ENERGY FOR EASY .

°C Storage temperature Max. operating junction temperature DIN humidity category (DIN 40040) IEC climatic category (DIN IEC 68-1) - See note on ISOWATT 220 in this datasheet June 1988 60 V 60 V ±20 V 120 A BUZ11S2 BUZ11S2FI 30 20 A 75 35 W -55 to 150 °c 150 °c E 55/150/56 1/.

isc N-Channel Mosfet Transistor BUZ11S2 ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(Max) ·SOA is Power Dissipation Limited ·High input impedance ·High speed switching ·Minimum Lot.

*Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(Max)
*SOA is Power Dissipation Limited
*High input impedance
*High speed switching
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION Designed for applications such as switching regulators, switching c.