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BUZ11S2FI - N-Channel MOSFET

Download the BUZ11S2FI datasheet PDF. This datasheet also covers the BUZ11S2 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (BUZ11S2-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BUZ11S2 BUZ11S2FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11S2 BUZ11S2FI Voss 60 V 60 V ROS(on) 0.04 {1 0.04 {1 10 - 30 A 20 A • VERY LOW ON-LOSSES • LOW DRIVE ENERGY FOR EASY DRIVE • HIGH TRANSCONDUCTANCE/Crss RATIO INDUSTRIAL APPLICATIONS: • AUTOMATIVE POWER ACTUATORS N - channel enhancement mode POWER MaS field effect transistors. Easy drive and very fast switching times make these POWER MaS transistors ideal for high speed switching circuits in applications such as power actuator driving, motor drive including brushless motors, hydraulic actuators and many other uses in automotive applications. They also find use in DCIDC converters and uninterruptible power supplies.