BUZ11A
BUZ11A is N-Channel MOSFET manufactured by STMicroelectronics.
®
- CHANNEL 50V
- 0.045Ω
- 26A TO-220 STrip FET™ MOSFET
T YPE BUZ11A s s s s s
V DSS 50 V
R DS(on) < 0.055 Ω
ID 26 A
TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175o C OPERATING TEMPERATURE
3 1 2
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) s
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID IDM P tot Ts tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Storage Temperature Max. Operating Junction Temperature DIN HUMIDITY CAT EGORY (DIN 40040) IEC CLIMAT IC CAT EG ORY (DIN IEC 68-1)
First digit of the datecode being Z or K identifies silicon characterized in this datasheet. o o
Value 50 50 ± 20 26 104 75 -65 to 175 175 E 55/150/56
Un it V V V A A W o o
July 1999
1/8
THERMAL DATA
R thj -case R thj -amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.67 62.5 o o
C/W C/W
AVALANCHE CHARACTERISTICS
Symbo l IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 30V) Valu e 30 120 Unit A m J
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) OFF
Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µ A V GS = 0 Min. 50 1 10 ± 100 Typ. Max. Unit V µA µA n A
V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (VDS = 0) V GS = ± 20 V
Tj = 125 o C
ON (∗)
Symbo l V GS(th) R DS(on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance V GS = 10...
