STMicroelectronics BUZ11A
N-Channel MOSFET
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) s TO-220 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID IDM P tot Ts tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Storage Temperature Max. Operating Junction Temperature DIN HUMIDITY CAT EGORY (DIN 40040) IEC CLIMAT IC CAT EG ORY (DIN IEC 68-1) First digit of the datecode being Z or K identifies silicon characterized in this datasheet. o o Value 50 50 ± 20 26 104 75 -65 to 175 175 E 55/150/56 Un it V V V A A W o o C C July 1999 1/8 BUZ11A THERMAL DATA R thj -case R thj -amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.67 62.5 o o C/W C/W AVALANCHE CHARA...