BUZ11A Datasheet and Specifications PDF

® BUZ11A N - CHANNEL 50V - 0.045Ω - 26A TO-220 STripFET™ MOSFET T YPE BUZ11A s s s s s V DSS 50 V R DS(on) < 0.055 Ω ID 26 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE .

is datasheet. o o Value 50 50 ± 20 26 104 75 -65 to 175 175 E 55/150/56 Un it V V V A A W o o C C July 1999 1/8 BUZ11A THERMAL DATA R thj -case R thj -amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.67 62.5 o o C/W C/W AVALANCHE CHARACTERISTICS Symbo l IAR .

BUZ 11 A Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 11 A VDS 50 V ID 26 A RDS(on) 0.055 Ω Package TO-220 A.

5°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 50 3 0.1 10 10 0.04 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 1.

isc N-Channel Mosfet Transistor ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.055Ω(Max) ·Avalanche rugged technology ·High current capability ·175℃ Operating Temperature ·High speed swit.

*Static Drain-Source On-Resistance : RDS(on) = 0.055Ω(Max)
*Avalanche rugged technology
*High current capability
*175℃ Operating Temperature
*High speed switching
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*High current,high speed switching
*Sole.