Download BUZ11A Datasheet PDF
Inchange Semiconductor
BUZ11A
BUZ11A is N-Channel MOSFET manufactured by Inchange Semiconductor.
FEATURES - Static Drain-Source On-Resistance : RDS(on) = 0.055Ω(Max) - Avalanche rugged technology - High current capability - 175℃ Operating Temperature - High speed switching - Minimum Lot-to-Lot variations for robust device performance and reliable operation - DESCRITION - High current,high speed switching - Solenoid and relay drivers - Regulators - DC-DC & DC-AC converters - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) Gate-Source Voltage ±20 Drain Current-continuous@ TC=25℃ Drain Current-Single Plused Ptot Total Dissipation@TC=25℃ Tj Max. Operating Junction Temperature ℃ Tstg Storage Temperature Range -55~175...