Datasheet4U Logo Datasheet4U.com

BUZ100 - N-Channel MOSFET

Key Features

  • Static Drain-Source On-Resistance : RDS(on) = 0.018Ω(Max).
  • Ultra low on-resistance.
  • Fast Switching.
  • 175℃ operating temperature.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BUZ100 Power Transistor Siemens Semiconductor Group
BUZ100L Power Transistor Siemens Semiconductor Group
BUZ100S Power Transistor Siemens Semiconductor Group
BUZ100SL Power Transistor Siemens Semiconductor Group
BUZ100SL-4 Power Transistor Siemens Semiconductor Group

Other Datasheets by Inchange Semiconductor

Part Number Description
BUZ10 N-Channel MOSFET
BUZ104 N-Channel MOSFET
BUZ10A N-Channel MOSFET
BUZ11 N-Channel MOSFET
BUZ11A N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel Mosfet Transistor ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.018Ω(Max) ·Ultra low on-resistance ·Fast Switching ·175℃ operating temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High current , high speed switching ·Solenoid and relay drivers ·DC-DC & DC-AC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 50 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=101℃ 60 A IDM Drain Current-Single Plused 240 A Ptot Total Dissipation@TC=25℃ 250 W Tj Max.