• Part: BUZ100
  • Description: Power Transistor
  • Manufacturer: Siemens Semiconductor Group
  • Size: 185.99 KB
Download BUZ100 Datasheet PDF
BUZ100 page 2
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Datasheet Summary

BUZ 100 SIPMOS ® Power Transistor - N channel - Enhancement mode - Avalanche-rated - dv/dt rated - Ultra low on-resistance - 175°C operating temperature - also in TO-220 SMD available Pin 1 G Type BUZ 100 Pin 2 D Pin 3 S 50 V 60 A RDS(on) 0.018 Ω Package TO-220 AB Ordering Code C67078-S1348-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 60 Unit A ID IDpuls TC = 101 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse 250 dv/dt 6 mJ ID = 60 A, VDD = 25 V, RGS = 25 Ω L = 70 µH, Tj = 25 °C Reverse diode dv/dt kV/µs IS = 60 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C Gate source voltage Power dissipation VGS Ptot ± 20...