• Part: BUZ102S
  • Description: Power Transistor
  • Manufacturer: Infineon
  • Size: 122.86 KB
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Datasheet Summary

BUZ 102S SIPMOS Power Transistor Features - N channel - Enhancement mode - Avalanche rated Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current - dv/dt rated - 175 ˚C operating temperature VDS RDS(on) ID 55 0.018 V Ω A Type BUZ102S BUZ102S E3045A BUZ102S E3045 Package Ordering Code P-TO220-3-1 Q67040-S4011-A2 P-TO263-3-2 Q67040-S4011-A6 P-TO263-3-2 Q67040-S4011-A5 Packaging Tube Tape and Reel Tube Pin 1 Pin 2 Pin 3 GDS Maximum Ratings, at Tj = 25 ˚C unless unless specified Parameter Symbol Continuous drain current TC = 25 ˚C TC = 100 ˚C Pulsed drain current TC = 25 ˚C Avalanche energy, single pulse ID = 52 A, VDD = 25 V,...