Datasheet4U Logo Datasheet4U.com

BUZ102S - Power Transistor

Key Features

  • N channel.
  • Enhancement mode.
  • Avalanche rated Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current.
  • dv/dt rated.
  • 175 ˚C operating temperature VDS RDS(on) ID 55 0.018 52 V Ω A Type BUZ102S BUZ102S E3045A BUZ102S E3045 Package Ordering Code P-TO220-3-1 Q67040-S4011-A2 P-TO263-3-2 Q67040-S4011-A6 P-TO263-3-2 Q67040-S4011-A5 Packaging Tube Tape and Reel Tube Pin 1 Pin 2 Pin 3 GDS Maximum Ratings, at Tj.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BUZ102S Power Transistor Siemens Semiconductor Group
BUZ102SL Power Transistor Siemens Semiconductor Group
BUZ102SL-4 Power Transistor Siemens Semiconductor Group
BUZ102 Power Transistor Siemens Semiconductor Group
BUZ102AL Power Transistor Siemens Semiconductor Group

Other Datasheets by Infineon

Part Number Description
BUZ103S SIPMOS Power Transistor
BUZ30AH Power Transistor
BUZ31H Power-Transistor
BUZ31H3045A Power-Transistor
BUZ31H3046 Power-Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BUZ 102S SIPMOS Power Transistor Features • N channel • Enhancement mode • Avalanche rated Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current • dv/dt rated • 175 ˚C operating temperature VDS RDS(on) ID 55 0.