• Part: BUZ103S
  • Description: SIPMOS Power Transistor
  • Manufacturer: Infineon
  • Size: 120.72 KB
Download BUZ103S Datasheet PDF
BUZ103S page 2
Page 2
BUZ103S page 3
Page 3

Datasheet Summary

BUZ 103S SIPMOS Power Transistor Features - N channel - Enhancement mode - Avalanche rated Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current - dv/dt rated - 175 ˚C operating temperature VDS RDS(on) ID 55 0.036 V Ω A Type BUZ103S BUZ103S E3045A BUZ103S E3045 Package Ordering Code Packaging P-TO220-3-1 Q67040-S4009-A2 Tube P-TO263-3-2 Q67040-S4009-A6 Tape and Reel P-TO263-3-2 Q67040-S4009-A5 Tube Pin 1 Pin 2 Pin 3 GDS Maximum Ratings at Tj = 25 ˚C unless otherwise specified Parameter Symbol Continuous drain current TC = 25 ˚C TC = 100˚C Pulsed drain current IDpulse TC = 25 ˚C Avalanche energy, single pulse ID = 31 A, VDD...