BUZ103AL Datasheet | Siemens Semiconductor Group

BUZ 103AL SIPMOS ® Power Transistor - N channel - Enhancement mode - Avalanche-rated - Logic Level - dv/dt rated - Low on-resistance - 175 °C operating temperature - also in TO-220 SMD available Pin 1 G Pin 2 D Pin 3 S Type BUZ 103AL 50 V 35 A RDS(on) 0.05 Ω Package TO-220 AB Ordering Code C67078-S1357-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 35 Unit A ID IDpuls TC = 29 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse 100 dv/dt 6 m J ID = 35 A, VDD = 25 V, RGS = 25 Ω L = 81 µH, Tj = 25 °C Reverse diode dv/dt k V/µs IS = 35 A, VDS = 40 V, di F/dt = 200 A/µs Tjmax = 175 °C Gate source voltage Gate-source peak voltage,aperiodic Power dissipation VGS Vgs Ptot ± 14 ± 20 TC = 25 °C Semiconductor...