• Part: BUZ103S
  • Description: Power Transistor
  • Category: Transistor
  • Manufacturer: Siemens Semiconductor Group
  • Size: 121.52 KB
Download BUZ103S Datasheet PDF
Siemens Semiconductor Group
BUZ103S
BUZ103S is Power Transistor manufactured by Siemens Semiconductor Group.
BUZ 103 S SPP31N05 SIPMOS ® Power Transistor - N channel - Enhancement mode - Avalanche-rated - dv /dt rated - 175°C operating temperature - also in SMD available Pin 1 Pin 2 Pin 3 Type VDS 55 V ID 31 A RDS(on) 0.04 Ω Package Ordering Code BUZ 103 S TO-220 AB Q67040-S4009-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 °C TC = 100 °C A 31 22 Pulsed drain current TC = 25 °C IDpuls E AS Avalanche energy, single pulse ID = 31 A, V DD = 25 V, RGS = 25 Ω L = 291 µH, Tj = 25 °C m J IAR E AR Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IS = 31 A, VDS = 40 V, di F/dt = 200 A/µs Tjmax = 175 °C 31 7.5 A m J k V/µs...