BUZ103
BUZ103 is Power Transistor manufactured by Siemens Semiconductor Group.
BUZ 103
SIPMOS ® Power Transistor
- N channel
- Enhancement mode
- Avalanche-rated
- dv/dt rated
- Low on-resistance
- 175°C operating temperature
- also in TO-220 SMD available Pin 1 G Type BUZ 103 Pin 2 D Pin 3 S
50 V
40 A
RDS(on)
0.04 Ω
Package TO-220 AB
Ordering Code C67078-S1352-A2
Maximum Ratings Parameter Continuous drain current Symbol Values 40 Unit A
ID IDpuls
TC = 23 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
100 dv/dt 6 m J
ID = 40 A, VDD = 25 V, RGS = 25 Ω L = 63 µH, Tj = 25 °C
Reverse diode dv/dt k V/µs
IS = 40 A, VDS = 40 V, di F/dt = 200 A/µs Tjmax = 175 °C
Gate source voltage Power dissipation
VGS Ptot
± 20 120
TC = 25 °C
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Tj Tstg Rth JC Rth JA
-55 ... + 175 -55 ... + 175 ≤ 1.25 ≤ 75 E 55 / 175 / 56
°C K/W
Semiconductor...
