BUZ102S Datasheet

The BUZ102S is a Power Transistor.

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Part NumberBUZ102S
ManufacturerSiemens Semiconductor Group
Overview BUZ 102 S SPP52N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type V. case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55
* + 175 -55
* + 175 °C ≤ 1.25 ≤ 62 55 / 175 / 56 K/W Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. U.
Part NumberBUZ102S
DescriptionPower Transistor
ManufacturerInfineon
Overview BUZ 102S SIPMOS Power Transistor Features • N channel • Enhancement mode • Avalanche rated Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current • dv/dt r.
* N channel
* Enhancement mode
* Avalanche rated Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current
* dv/dt rated
* 175 ˚C operating temperature VDS RDS(on) ID 55 0.018 52 V Ω A Type BUZ102S BUZ102S E3045A BUZ102S E3045 Package Ordering Code P-TO22.