| Part number | BUZ10 |
|---|---|
| Datasheet | BUZ10_SiemensSemiconductorGroup.pdf |
| File Size | 132.45 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | Power Transistor |
|
|
Static Characteristics Drain- source breakdown voltage Values typ. Dynamic Characteristics Transconductance Values typ. Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed A 1.5 60 0.1 23 92 V 1.9 ns µC Values typ.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BUZ10 | N-Channel Power MOSFET | STMicroelectronics |
 |
BUZ10 | N-Channel MOSFET | INCHANGE |
|
BUZ100 | N-Channel MOSFET | INCHANGE |
 |
BUZ101 | Power Transistor | Siemens |
 |
BUZ101 | N-Channel MOSFET Transistor | Inchange Semiconductor |
See all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| BUZ100 | Power Transistor |
| BUZ100L | Power Transistor |
| BUZ100S | Power Transistor |
| BUZ100SL | Power Transistor |
| BUZ100SL-4 | Power Transistor |
| BUZ101L | Power Transistor |
| BUZ101S | Power Transistor |
| BUZ101SL | Power Transistor |
| BUZ101SL-4 | Power Transistor |
| BUZ102 | Power Transistor |
