• Part: BUZ10
  • Description: Power Transistor
  • Manufacturer: Siemens Semiconductor Group
  • Size: 132.45 KB
Download BUZ10 Datasheet PDF
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Datasheet Summary

BUZ 10 Not for new design SIPMOS ® Power Transistor - N channel - Enhancement mode - Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 10 50 V 23 A RDS(on) 0.07 Ω Package TO-220 AB Ordering Code C67078-S1300-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 23 Unit A ID IDpuls TC = 26 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 23 1.3 mJ ID = 23 A, VDD = 25 V, RGS = 25 Ω L = 15.1 µH, Tj = 25 °C Gate source voltage Power dissipation 8 VGS Ptot ± 20 75 TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip...