| Part Number | BUZ10 |
|---|---|
| Manufacturer | STMicroelectronics |
| Overview | ® BUZ10 N - CHANNEL 50V - 0.06Ω - 23A TO-220 STripFET™ MOSFET T YPE BUZ 10 s s s s s V DSS 50 V R DS(o n) < 0.07 Ω ID 23 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TES. datasheet. o o Value 50 50 ± 20 23 92 75 -65 to 175 175 E 55/150/56 Un it V V V A A W o o C C February 2000 1/8 BUZ10 THERMAL DATA R thj -case R thj -amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 2.0 62.5 o o C/W C/W AVALANCHE CHARACTERISTICS Symbo l IAR E . |
BUZ10 Datasheet
The BUZ10 is a N-Channel Power MOSFET.
| Part Number | BUZ10 |
|---|---|
| Description | Power Transistor |
| Manufacturer | Siemens Semiconductor Group |
| Overview | BUZ 10 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 10 VDS 50 V ID 23 A RDS(on) 0.07 Ω Package TO-220 AB Or. ss otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 50 3 0.1 10 10 0.05 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA V. |
| Part Number | BUZ10 |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel Mosfet Transistor
·FEATURES ·Drain Current –ID=23A@ TC=25℃ ·Static Drain-Source On-Resistance
: RDS(on) = 0.07Ω(Max) ·175℃ operating temperature ·100% avalanche tested ·Minimum Lot-to-L.
*Drain Current *ID=23A@ TC=25℃ *Static Drain-Source On-Resistance : RDS(on) = 0.07Ω(Max) *175℃ operating temperature *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *High current , high speed switching *Solenoid and relay driver. |