Inchange Semiconductor BUZ10
N-Channel MOSFET
| Part No. | BUZ10 |
|---|---|
| Datasheet | BUZ10 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●Drain Current –ID=23A@ TC=25℃●Static Drain-Source On-Resistance : RDS(on) = 0.07Ω(Max)
●175℃ operating temperature
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●DESCRITION
●High current , high speed switching
●Solenoid and relay drivers
●DC-DC & DC-AC converters
●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 50 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 23 A IDM Drain Current-Single Plused 92 A Ptot Total Dissipation@TC=25℃ 75 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature Range -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W BUZ10 isc website： 1 isc & iscsemi is registered trademark isc N-Channel Mosfet TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIO...