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BUZ10 - N-Channel MOSFET

Key Features

  • Drain Current.
  • ID=23A@ TC=25℃.
  • Static Drain-Source On-Resistance : RDS(on) = 0.07Ω(Max).
  • 175℃ operating temperature.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription (Reference)

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isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current –ID=23A@ TC=25℃ ·Static Drain-Source On-Resistance : RDS(on) = 0.07Ω(Max) ·175℃ operating temperature ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High current , high speed switching ·Solenoid and relay drivers ·DC-DC & DC-AC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 50 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 23 A IDM Drain Current-Single Plused 92 A Ptot Total Dissipation@TC=25℃ 75 W Tj Max.