• Part: BUZ101SL-4
  • Description: Power Transistor
  • Manufacturer: Siemens Semiconductor Group
  • Size: 90.24 KB
Download BUZ101SL-4 Datasheet PDF
Siemens Semiconductor Group
BUZ101SL-4
BUZ101SL-4 is Power Transistor manufactured by Siemens Semiconductor Group.
Preliminary data BUZ 101SL-4 SIPMOS ® Power Transistor - Quad-channel - Enhancement mode - Logic level - Avalanche-rated - dv/dt rated Type BUZ 101SL-4 55 V 4.1 A RDS(on) 0.075 Ω Package P-DSO-28 Ordering Code C67078-S. . . .- . . Maximum Ratings Parameter Continuous drain current one channel active Symbol Values 4.1 Unit A ID IDpuls TA = 25 °C Pulsed drain current one channel active TA = 25 °C Avalanche energy, single pulse 90 dv/dt 6 mJ ID = 4.1 A, VDD = 25 V, RGS = 25 Ω L = 10.7 mH, Tj = 25 °C Reverse diode dv/dt kV/µs IS = 4.1 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C Gate source voltage Power dissipation ,one channel active VGS Ptot ± 14...