| Part Number | BUZ100 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel Mosfet Transistor
·FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 0.018Ω(Max) ·Ultra low on-resistance ·Fast Switching ·175℃ operating temperature ·Minimum Lot-to-Lot variation.
*Static Drain-Source On-Resistance : RDS(on) = 0.018Ω(Max) *Ultra low on-resistance *Fast Switching *175℃ operating temperature *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *High current , high speed switching *Solenoid and relay drivers *DC-DC & D. |
BUZ100 Datasheet
The BUZ100 is a N-Channel MOSFET.
| Part Number | BUZ100 |
|---|---|
| Description | Power Transistor |
| Manufacturer | Siemens Semiconductor Group |
| Overview | BUZ 100 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 G Type BU. 07/96 BUZ 100 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 50 3 0.1 1 10 10 0.013 4 1 100 100 100 V VGS = 0 V, ID = 0.25 mA, Tj = -40 °C Gate threshold voltage VG. |