Datasheet4U Logo Datasheet4U.com

BUZ11 - N-Channel Power MOSFET

General Description

only.

Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.

Accordingly, the reader is cautioned to verify that data sheets are current before placing orders.

Key Features

  • 30A, 50V.
  • rDS(ON) = 0.040Ω.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Majority Carrier Device.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER BUZ11.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BUZ11 N-CHANNEL MOSFET STMicroelectronics
BUZ11 Power Transistor Siemens Semiconductor Group
BUZ11 N-Channel Power MOSFET ON Semiconductor
BUZ11 N-Channel Power MOSFET Fairchild Semiconductor
BUZ11 N-Channel MOSFET INCHANGE

Other Datasheets by Intersil (now Renesas)

Part Number Description
BUZ20 N-Channel Power MOSFET
BUZ32 N-Channel Power MOSFET
BUZ351 N-Channel Power MOSFET
BUZ41A N-Channel Power MOSFET
BUZ42 N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BUZ11 Data Sheet June 1999 File Number 2253.2 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Formerly developmental type TA9771. Features • 30A, 50V • rDS(ON) = 0.