| Part Number | BUZ11 |
|---|---|
| Manufacturer | Intersil |
| Overview |
only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are cu.
* 30A, 50V * rDS(ON) = 0.040Ω * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Majority Carrier Device * Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART N. |
BUZ11 Datasheet
The BUZ11 is a N-Channel Power MOSFET.
| Part Number | BUZ11 |
|---|---|
| Description | N-Channel Power MOSFET |
| Manufacturer | onsemi |
| Overview |
Data Sheet
BUZ11
September 2013 File Number 2253.2
N-Channel Power MOSFET 50V, 30A, 40 mΩ
This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications s.
* 30A, 50V * rDS(ON) = 0.040Ω * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Majority Carrier Device * Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging . |
| Part Number | BUZ11 |
|---|---|
| Description | N-CHANNEL MOSFET |
| Manufacturer | STMicroelectronics |
| Overview | ® BUZ11 N - CHANNEL 50V - 0.03Ω - 33A TO-220 STripFET™ MOSFET T YPE BUZ 11 s s s s s V DSS 50 V R DS(o n) < 0.04 Ω ID 33 A TYPICAL RDS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TES. datasheet. o o Value 50 50 ± 20 33 134 90 -65 to 175 175 E 55/150/56 Un it V V V A A W o o C C July 1999 1/8 BUZ11 THERMAL DATA R thj -case R thj -amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.67 62.5 o o C/W C/W AVALANCHE CHARACTERISTICS Symbo l IAR E AS. |
| Part Number | BUZ11 |
|---|---|
| Description | N-Channel Power MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
Data Sheet
BUZ11
September 2013 File Number 2253.2
N-Channel Power MOSFET 50V, 30A, 40 mΩ
This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications s.
* 30A, 50V * rDS(ON) = 0.040Ω * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Majority Carrier Device * Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging . |