BUZ110S
BUZ110S is Power Transistor manufactured by Siemens Semiconductor Group.
BUZ 110 S
SPP80N05
SIPMOS ® Power Transistor
- N channel
- Enhancement mode
- Avalanche-rated
- dv /dt rated
- 175°C operating temperature
- also in SMD available
Pin 1 Pin 2 Pin 3
Type
VDS 55 V
ID 80 A
RDS(on) 0.012 Ω
Package
Ordering Code
BUZ 110 S
TO-220 AB
Q67040-S4005-A2
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current
TC = 25 °C TC = 100 °C
A 80 66
Pulsed drain current
TC = 25 °C
IDpuls
E AS
Avalanche energy, single pulse
ID = 80 A, V DD = 25 V, RGS = 25 Ω L = 144 µH, Tj = 25 °C m J
IAR E AR
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt
IS = 80 A, VDS = 40 V, di F/dt = 200 A/µs Tjmax = 175 °C
80 20
A m J k V/µs...
