BUZ11AL Datasheet | Siemens Semiconductor Group

BUZ 11 AL Not for new design SIPMOS ® Power Transistor - N channel - Enhancement mode - Avalanche-rated - Logic Level Pin 1 G Type BUZ 11 AL Pin 2 D Pin 3 S 50 V 26 A RDS(on) 0.055 Ω Package TO-220 AB Ordering Code C67078-S1330-A3 Maximum Ratings Parameter Continuous drain current Symbol Values 26 Unit A ID IDpuls TC = 25 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 30 1.9 m J ID = 30 A, VDD = 25 V, RGS = 25 Ω L = 15.6 µH, Tj = 25 °C Gate source voltage Gate-source peak voltage,aperiodic Power dissipation 14 VGS Vgs Ptot ± 14 ± 20 TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg Rth JC Rth JA -55 ... + 150 -55 ... + 150 ≤ 1.67 ≤ 75 E 55 / 150 / 56 °C K/W Semiconductor...