BUZ11AL Description
Static Characteristics Drain- source breakdown voltage Values typ. Dynamic Characteristics Transconductance Values typ. Reverse Diode Inverse diode continuous forward current IS A 1.6 100 0.2 26 104 V 1.8 ns µC Values typ.
BUZ11AL is Power Transistor manufactured by Siemens Semiconductor Group.
| Manufacturer | Part Number | Description |
|---|---|---|
STMicroelectronics |
BUZ11A | N-Channel MOSFET |
Inchange Semiconductor |
BUZ11A | N-Channel MOSFET |
STMicroelectronics |
BUZ11 | N-CHANNEL MOSFET |
Intersil |
BUZ11 | N-Channel Power MOSFET |
| BUZ11 | N-Channel Power MOSFET |
Static Characteristics Drain- source breakdown voltage Values typ. Dynamic Characteristics Transconductance Values typ. Reverse Diode Inverse diode continuous forward current IS A 1.6 100 0.2 26 104 V 1.8 ns µC Values typ.