BUZ11S2 Overview
Static Characteristics Drain- source breakdown voltage Values typ. Dynamic Characteristics Transconductance Values typ. Reverse Diode Inverse diode continuous forward current IS A 1.6 80 0.1 30 120 V 1.8 ns µC Values typ.
| Part number | BUZ11S2 |
|---|---|
| Datasheet | BUZ11S2_SiemensSemiconductorGroup.pdf |
| File Size | 120.40 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | Power Transistor |
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Static Characteristics Drain- source breakdown voltage Values typ. Dynamic Characteristics Transconductance Values typ. Reverse Diode Inverse diode continuous forward current IS A 1.6 80 0.1 30 120 V 1.8 ns µC Values typ.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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BUZ11S2 | N-Channel MOSFET | STMicroelectronics |
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BUZ11S2 | N-Channel MOSFET | INCHANGE |
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BUZ11S2FI | N-Channel MOSFET | STMicroelectronics |
See all Siemens Semiconductor Group (now Infineon) datasheets
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