BUZ11S2 Description
Static Characteristics Drain- source breakdown voltage Values typ. Dynamic Characteristics Transconductance Values typ. Reverse Diode Inverse diode continuous forward current IS A 1.6 80 0.1 30 120 V 1.8 ns µC Values typ.
BUZ11S2 is Power Transistor manufactured by Siemens Semiconductor Group.
| Manufacturer | Part Number | Description |
|---|---|---|
STMicroelectronics |
BUZ11S2 | N-Channel MOSFET |
Inchange Semiconductor |
BUZ11S2 | N-Channel MOSFET |
STMicroelectronics |
BUZ11S2FI | N-Channel MOSFET |
Static Characteristics Drain- source breakdown voltage Values typ. Dynamic Characteristics Transconductance Values typ. Reverse Diode Inverse diode continuous forward current IS A 1.6 80 0.1 30 120 V 1.8 ns µC Values typ.