BYT12PI-1000 Datasheet | STMicroelectronics

® BYT 12PI-1000 FAST RECOVERY RECTIFIER DIODE VERY HIGH REVERSE VOLTAGE CAPABILITY VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED: Capacitance 7p F Insulating voltage 2500 VRMS SUITABLE APPLICATIONS FREE WHEELING DIODE IN CONVERTERS AND MOTOR CONTROL CIRCUITS RECTIFIER IN S.M.P.S. ABSOLUTE MAXIMUM RATINGS Symbol VRRM VRSM IFRM IF (RMS) IF (AV) IFSM P Tstg Tj Parameter Repetitive Peak Reverse Voltage Non Repetitive Peak Reverse Voltage Repetive Peak Forward Current RMS Forward Current Average Forward Current Surge non Repetitive Forward Current Power Dissipation Storage and Junction Temperature Range Tc = 50°C δ = 0.5 tp = 10ms Sinusoidal Tc = 50°C tp ≤ 10µs Value 1000 1000 150 25 12 75 25 - 40 to + 150 - 40 to + 150 Unit V V A A A A W °C Isolated TO220AC (Plastic) THERMAL RESISTANCE Symbol Rth (j - c) Junction-case Test Conditions Value 4 Unit °C/W October 1999 Ed : 1A 1/5 BYT 12PI-1000 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Synbol IR Tj = 25°C Tj = 100°C VF Tj = 25°C Tj = 100°C IF = 12A Test Conditions VR = VRRM Min. Typ. Max. 50 2.5 1.9 1.8 Unit µA m A V RECOVERY CHARACTERISTICS Symbol trr Tj = 25°C IF = 1A IF = 0.5A Test Conditions di F/dt = - 15A/µs IR = 1A VR = 30V Irr = 0.25A Min. Typ. Max. 155 65 Unit ns TURN-OFF SWITCHING CHARACTERISTICS (Without Series Inductance) Symbol t IRM di F/dt = - 50A/µs di F/dt = - 100A/µs IRM di F/dt = -50A/µs di F/dt = - 100A/µs 9 Test Conditions VCC = 200 V IF = 12A Lp ≤ 0.05µH Tj = 100°C See figure 11 Min. Typ. Max. 200 120 7.8 A Unit ns TURN-OFF OVERVOLTAGE COEFFICIENT (With Series Inductance) Symbol C= VRP Test Conditions Tj = 100°C di F/dt = - 12A/µs VCC = 200V Lp = 12µH IF = IF (AV) See figure 12 Min. Typ. Max. 4.5 Unit To evaluate the conduction losses use the following equations: VF = 1.47 + 0.026 IF P = 1.47 x IF(AV) + 0.026 IF2(RMS) Figure 1. Low frequency power losses versus average current Figure 2. Peak current versus form factor 2/5 BYT...