BYT60P-1000 Datasheet | STMicroelectronics

EATURES AND BENEFITS VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED PACKAGE: ISOTOP Insulation voltage: 2500 VRMS Capacitance = 45 p F Inductance< 5 n H DESCRIPTION Dual or high single voltage rectifier devices suited for Switch Mode Power Supplies and other power converters. These devices are packaged in ISOTOP or in SOD93. 2 x 60 A 1000 V 1.8 V 70 ns K2 A2 K1 A1 BYT261PIV-1000 ISOTOPTM (Plastic) SOD93 (Plastic) ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IFRM IF(RMS) IF(AV) IFSM Tstg Tj Parameter Repetitive peak reverse voltage Repetitive peak forward current RMS forward current Average forward current δ = 0.5 tp=5 µs F=1k Hz ISOTOP SOD93 Tc = 50°C ISOTOP Value 1000 1000 140 100 60 60 400 - 40 to + 150 150 A °C °C A Unit V A A Surge non repetitive forward current Storage temperature range Maximum operating junction temperature Tc = 60°C SOD93 tp = 10 ms Sinusoidal TM: ISOTOP is a registered trademark of STMicroelectronics. October 1999 - Ed: 4B 1/7 BYT60P-1000 / BYT261PIV-1000 THERMAL RESISTANCES Symbol Rth(j-c) Parameter Junction to case ISOTOP SOD93 Rth(c) Per diode Total Total Coupling Value 0.8 0.45 0.7 0.1 °C/W Unit °C/W When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol VF - IR - - Parameter Forward voltage drop Reverse leakage current Test Conditions Tj = 25°C Tj = 100°C Tj = 25°C Tj = 100°C VR = VRRM IF = 60 A Min. Typ. Max. 1.9 1.8 100 6 µA m A Unit V Pulse test : - tp = 380 µs, δ < 2% - - tp = 5 ms, δ < 2% To evaluate the conduction losses use the following equation: P = 1.47 x IF(AV) + 0.005 IF2(RMS) RECOVERY CHARACTERISTICS (per diode) Symbol trr Test Conditions Tj = 25°C IF = 1A VR = 30V d IF/dt = - 15A/µs IF = 0.5A IR = 1A Irr = 0.25A Min. Typ. Max. 170 70 Unit ns TURN-OFF SWITCHING CHARACTERISTICS Symbol t IRM IRM Parameter Ma ximu m rev erse reco ve...