ESDALC6V1M6 Datasheet | STMicroelectronics

Features I/O1 1 6 I/O5 5 GND 4 I/O3 - - - .. 4 unidirectional TRANSIL diodes (ESDALC6V1M6) 5 unidirectional TRANSIL diodes (ESDALC6V1-5M6) Breakdown Voltage VBR = 6.1 V min Low diode capacitance (12 p F typ at 0 V) Low leakage current < 70 n A Very small PCB area: 1.45 mm² 500 microns pitch Leadfree package GND 2 I/O2 3 - - - - - ESDALC6V1-5M6 I/O1 1 GND 2 I/O2 3 6 I/O5 5 I/O4 4 I/O3 Description The ESDALC6V1xx M6 is monolithic arrays designed to protect up to 4 or 5 lines against ESD transients. The device is ideal for applications where both reduced print circuit board space and power absorption capability are required. Order Code Part number ESDALC6V1M6 ESDALC6V1-5M6 Marking G H plies with the following standards: Benefits - - - IEC61000-4-2 15 k V 8 k V 25 k V (air discharge) (contact discharge) (human body model) High ESD protection level High integration Suitable for high density boards MIL STD 883E- Method 3015-7: class3 TM: TRANSIL is a trademark of STMicroelectronics January 2006 Rev 3 1/8 .st. 8 1 Characteristics ESDALC6V1xx M6 Characteristics Absolute maximum ratings (Tamb = 25 °C) Symbol VPP PPP Ipp Tj Tstg TL TOP Parameter ESD discharge - IEC61000-4-2 air discharge IEC61000-4-2 contact discharge Peak pulse power dissipation (8/20 µs)(1) Tj initial = Tamb Value ± 15 ±8 30 3 125 -55 + 150 260 -40 + 125 Unit k V W A °C °C °C °C Repetitive peak pulse current typical value (8/20 µs) Junction temperature Storage temperature range Maximum lead temperature for soldering during 10 s Operating temperature range 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Electrical characteristics (Tamb = 25 °C) Symbol VRM VBR VCL IRM IPP αT VF Parameter Stand-off voltage Breakdown voltage Clamping voltage Leakage current @ VRM Peak pulse current Slope= 1/ Rd VCL VBR VRM I RM IR VF V I Voltage temperature coefficient Forward voltage drop I...