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F12NM50N - N-channel Power MOSFET

Description

ucThis series of devices is realized with the second dgeneration of MDmesh™ technology.

gate charge.

Features

  • Type VDSS (@Tjmax) RDS(on) max ID STB12NM50N t(s)STD12NM50N cSTI12NM50N uSTF12NM50N rodSTP12NM50N 550 V 550 V 550 V 550 V 550 V 0.38 Ω 0.38 Ω 0.38 Ω 0.38 Ω 0.38 Ω 11 A 11 A 11 A 11 A (1) 11 A P.
  • 100% avalanche tested te.
  • Low input capacitance and gate charge le.
  • Low gate input resistance bso.

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Datasheet preview – F12NM50N

Datasheet Details

Part number F12NM50N
Manufacturer STMicroelectronics
File Size 543.65 KB
Description N-channel Power MOSFET
Datasheet download datasheet F12NM50N Datasheet
Additional preview pages of the F12NM50N datasheet.

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    Full PDF Text Transcription

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    STB12NM50N,STD12NM50N,STI12NM50N STF12NM50N, STP12NM50N N-channel 500 V, 0.29 Ω, 11 A MDmesh™ II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP Features Type VDSS (@Tjmax) RDS(on) max ID STB12NM50N t(s)STD12NM50N cSTI12NM50N uSTF12NM50N rodSTP12NM50N 550 V 550 V 550 V 550 V 550 V 0.38 Ω 0.38 Ω 0.38 Ω 0.38 Ω 0.38 Ω 11 A 11 A 11 A 11 A (1) 11 A P■ 100% avalanche tested te■ Low input capacitance and gate charge le■ Low gate input resistance bsoApplication - O■ Switching applications t(s)Description ucThis series of devices is realized with the second dgeneration of MDmesh™ technology. This rorevolutionary Power MOSFET associates a new Pvertical structure to the company’s strip layout to teyield one of the world’s lowest on-resistance and gate charge.
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