STMicroelectronics F12NM50N
This rorevolutionary Power MOSFET associates a new Pvertical structure to the company’s strip layout to teyield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most Obsoledemanding high efficiency converters.| Part No. | F12NM50N |
|---|---|
| Datasheet | F12NM50N Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Type VDSS (@Tjmax) RDS(on) max ID STB12NM50N t(s)STD12NM50N cSTI12NM50N uSTF12NM50N rodSTP12NM50N 550 V 550 V 550 V 550 V 550 V 0.38 Ω 0.38 Ω 0.38 Ω 0.38 Ω 0.38 Ω 11 A 11 A 11 A 11 A (1) 11 A P● 100% avalanche tested te● Low input capacitance and gate charge le● Low gate input resistance bsoApplication - O● Switching applications t(s)DESCRIPTION
ucThis series of devices is realized with the second dgeneration of MDmesh™ technology. 3 2 1 TO-220 3 1 DPAK 3 1 D²PAK 123 I²PAK 3 2 1 TO-220FP Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking STB12NM50N B12NM50N STD12NM50N D12NM50N STI12NM50N I12NM50N STF12NM50N STP12NM50N F12NM50N P12NM50N Package D²PAK DPAK I²PAK TO-220FP TO-220 Packaging Tape and reel Tape and reel Tube Tube Tube July 2008 Rev 8 1/19 19 Contents Contents STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
