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F3NK80Z - STF3NK80Z

General Description

established PowerMESH.

Key Features

  • 3 2 1 TO-220FP D(2) Order code VDS STF3NK80Z 800 V.
  • 100% avalanche tested.
  • Gate charge minimized.
  • Very low intrinsic capacitance.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STF3NK80Z Datasheet N-channel 800 V, 3.6 Ω typ., 2.5 A SuperMESH Power MOSFET in a TO-220FP package Features 3 2 1 TO-220FP D(2) Order code VDS STF3NK80Z 800 V • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected Applications RDS(on) max. 4.5 Ω ID 2.5 A G(1) • Switching applications Description This high-voltage device is a Zener-protected N-channel Power MOSFET developed S(3) AM15572v1_no_tab using the SuperMESH technology by STMicroelectronics, an optimization of the well- established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.