Datasheet Summary
STGF100N30 STGP100N30, STGW100N30
90 A
- 330 V
- fast IGBT
Features
- Optimized for sustain and energy recovery circuits in PDP applications.
- State-of-the-art STripFET™ technology
- Peak collector current IRP = 330 A @
TC = 25 °C (see Table 2)
3 2 1
TO-220FP
3 2 1
TO-247
- Very low-on voltage drop (VCE(sat)) and energy per pulse for improved panel efficiency
)- High repetitive peak current capability ct(sDescription duAdvanced high-density and high-current IGBT rotechnology with low-drop panion diode Padapted to various functions in PDP sets.
3 2 1
TO-220
Figure 1. Internal schematic diagram lete Product(s)
- ObsoleteTable 1. Device summary soOrder codes
Ob STGF100N30
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