GF100N30 Datasheet (STMicroelectronics)

Part GF100N30
Description IGBT
Manufacturer STMicroelectronics
Size 673.99 KB
STMicroelectronics

GF100N30 Overview

Key Features

  • Optimized for sustain and energy recovery circuits in PDP applications
  • State-of-the-art STripFET™ technology
  • Peak collector current IRP = 330 A @ TC = 25 °C (see Table
  • Very low-on voltage drop (VCE(sat)) and energy per pulse for improved panel efficiency )
  • Internal lete Product(s)

Price & Availability

Seller Inventory Price Breaks Buy
No distributor offers were returned for this part.