GP10NB37LZ Description
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. The built in collector-gate Zener exhibits a very precise active clamping while the gateemitter Zener supplies an ESD protection. TAB 3 2 1 TO-220 TAB 3 1 D²PAK Figure.
GP10NB37LZ Key Features
- Low threshold voltage
- Low on-voltage drop
- Low gate charge
- High current capability
- High voltage clamping feature