STMicroelectronics GP10NB37LZ
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. The built in collector-gate Zener exhibits a very precise active clamping while the gateemitter Zener supplies an ESD protection.FEATURES
● Low threshold voltage● Low on-voltage drop
● Low gate charge
● High current capability
● High voltage clamping feature
APPLICATIONS
● Automotive ignitionDESCRIPTION
TAB 3 2 1 TO-220 TAB 3 1 D²PAK Figure 1. Internal schematic diagram C (2,TAB) G (1) Table 1. Device summary Order codes Marking STGB10NB37LZ STGB10NB37LZT4 STGP10NB37LZ GB10NB37LZ GB10NB37LZ GP10NB37LZ Package D²PAK D²PAK TO-220 E (3) SC090150 Packaging Tube Tape and reel Tube November 2009 Doc ID 7402 Rev 4 1/15 15 Contents Contents STGB10NB37LZ, STGP10NB37LZ 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . .