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GP30V60DF - IGBT

Description

This device is an IGBT developed using an advanced proprietary trench gate field stop structure.

The device is part of the V series of IGBTs, which represent an optimum compromise E (3) between conduction and switching losses to maximize the efficiency of very high frequency converters.

Features

  • Maximum junction temperature: TJ = 175 °C.
  • Tail-less switching off.
  • VCE(sat) = 1.85 V (typ. ) @ IC = 30 A.
  • Tight parameters distribution.
  • Safe paralleling.
  • Low thermal resistance.
  • Very fast soft recovery antiparallel diode.

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Full PDF Text Transcription

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STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data TAB 3 1 D²PAK TAB 3 2 1 TO-220 TAB 3 2 1 TO-247 3 2 1 TO-3P Figure 1. Internal schematic diagram C (2, TAB) Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 30 A • Tight parameters distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photovoltaic inverters • Uninterruptible power supply • Welding • Power factor correction • Very high frequency converters G (1) Description This device is an IGBT developed using an advanced proprietary trench gate field stop structure.
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