STMicroelectronics GP30V60DF
This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise E (3) between conduction and switching losses to maximize the efficiency of very high frequency converters.| Part No. | GP30V60DF |
|---|---|
| Datasheet | GP30V60DF Download |
| Manufacturer |  STMicroelectronics |
| Description | IGBT |
| Buy | Stock & Price |
FEATURES
● Maximum junction temperature: TJ = 175 °C● Tail-less switching off
● VCE(sat) = 1.85 V (typ.) @ IC = 30 A
● Tight parameters distribution
● Safe paralleling
● Low thermal resistance
● Very fast soft recovery antiparallel diode
APPLICATIONS
● Photovoltaic inverters● Uninterruptible power supply
● Welding
● Power factor correction
● Very high frequency converters G (1)
DESCRIPTION
Furthermore, a positive VCE(
