GP3NB60KDFP Datasheet | STMicroelectronics

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power MESH ™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with short circuit withstand capability. Std. Version APPLICATIONS HIGH FREQUENCY MOTOR CONTROLS s SMPS AND PFC IN BOTH HARD SWITCHING AND RESONANT TOPOLOGIES s “D” Version ORDERING INFORMATION SALES TYPE STGP3NB60K STGD3NB60KT4 STGP3NB60KD STGP3NB60KDFP STGB3NB60KDT4 MARKING GP3NB60K GD3NB60K GP3NB60KD GP3NB60KDFP GB3NB60KD PACKAGE TO-220 DPAK TO-220 TO-220FP D2PAK PACKAGING TUBE TAPE & REEL TUBE TUBE TAPE & REEL May 2002 1/14 STGP3NB60K/STGD3NB60K/STGP3NB60KD/STGP3NB60KDFP/STGB3NB60KD ABSOLUTE MAXIMUM RATINGS Symbol Parameter TO-220 D2PAK VCES VECR VGE IC IC ICM (n) If (1) Ifm (1) PTOT VISO Tstg Tj Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuos) at TC = 25°C Collector Current (continuos) at TC = 100°C Collector Current (pulsed) Forward Current Forward Current Pulsed Total Dissipation at TC = 25°C Derating Factor Insulation Withstand Voltage A.C. Storage Temperature Max. Operating Junction Temperature -68 6 3 24 3 24 25 0.75 2500 - 55 to 150 150 -60 Value TO-220FP 600 20 ±20 6 3 24 6 3 24 DPAK V V V A A A A A W W/°C V °C Unit (n ) Pulse width limited by safe operating area (1) For “D” version only THERMAL DATA TO-220 D2PAK Rthj-case Rthj-amb Rthc-h Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-heatsink Typ 1.8 62.5 0.5 TO-220FP 5 DPAK 2.1 100 °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) MAIN PARAMETERS Symbol VBR(CES) ICES IGES VGE(th) VCE(sat) Parameter Collector-Emitter Breakdown Voltage Collector cut-off (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Gate Threshold Voltage Collector-Emitter Saturation...