GWT60V60DF Overview
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series of IGBTs, which represents an optimum promise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature.
GWT60V60DF Key Features
- Maximum junction temperature: TJ = 175 °C
- Tail-less switching off
- VCE(sat) = 1.85 V (typ.) @ IC = 60 A
- Tight parameter distribution
- Safe paralleling
- Low thermal resistance
- Very fast soft recovery antiparallel diode