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HCF4069U - Hex inverter

General Description

The HCF4069U is a monolithic integrated circuit fabricated in metal oxide semiconductor technology available in the SO14 package.

The HCF4069U consists of six COS/MOS inverter circuits.

Key Features

  • Medium-speed operation tPD = 30 ns (typ. ) at 10 V.
  • Standardized symmetrical output characteristics.
  • Quiescent current specified up to 20 V.
  • 5 V, 10 V, and 15 V parametric ratings.
  • Input leakage current II = 100 nA (max. ) at VDD = 18 V and TA = 25 ° C.
  • 100 % tested for quiescent current.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HCF4069U Hex inverter Datasheet - production data • ESD performance – HBM: 1 kV – MM: 200 V – CDM: 1 kV SO14 Features • Medium-speed operation tPD = 30 ns (typ.) at 10 V • Standardized symmetrical output characteristics • Quiescent current specified up to 20 V • 5 V, 10 V, and 15 V parametric ratings • Input leakage current II = 100 nA (max.) at VDD = 18 V and TA = 25 ° C • 100 % tested for quiescent current Applications • Automotive • Industrial • Computer • Consumer Description The HCF4069U is a monolithic integrated circuit fabricated in metal oxide semiconductor technology available in the SO14 package. The HCF4069U consists of six COS/MOS inverter circuits.