STMicroelectronics I11NM80
N-CHANNEL Power MOSFET
| Part No. | I11NM80 |
|---|---|
| Datasheet | I11NM80 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order codes VDSS RDS(on) max RDS(on)*Qg ID STB11NM80 STF11NM80 STI11NM80 800 V STP11NM80 STW11NM80 < 0.40 Ω 14Ω*nC 11 A● Low input capacitance and gate charge
● Low gate input resistance
● Best RDS(on)*Qg in the industry
APPLICATIONS
● Switching applicationsDESCRIPTION
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. 3 1 D²PAK 3 2 1 TO-220FP 123 I²PAK 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal sc
