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I11NM80 - N-CHANNEL Power MOSFET

General Description

These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout.

These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics.

Key Features

  • Order codes VDSS RDS(on) max RDS(on).
  • Qg ID STB11NM80 STF11NM80 STI11NM80 800 V STP11NM80 STW11NM80 < 0.40 Ω 14Ω.
  • nC 11 A.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • Best RDS(on).
  • Qg in the industry.

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Full PDF Text Transcription for I11NM80 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for I11NM80. For precise diagrams, and layout, please refer to the original PDF.

STB11NM80, STF11NM80 STI11NM80, STP11NM80, STW11NM80 N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247 Features Order codes VDS...

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FET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247 Features Order codes VDSS RDS(on) max RDS(on)*Qg ID STB11NM80 STF11NM80 STI11NM80 800 V STP11NM80 STW11NM80 < 0.40 Ω 14Ω*nC 11 A ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Best RDS(on)*Qg in the industry Applications ■ Switching applications Description These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics.

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