STMicroelectronics IRF520
N-Channel Power MOSFET
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) ISOWATT220 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol VD S V DG R V GS ID ID ID M(●) P tot V ISO T stg Tj Parameter IRF520 Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (cont.) at Tc = 25 C Drain Current (cont.) at Tc = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Value IRF520FI 100 100 ± 20 10 7 40 70 0.47 -65 to 175 175 7 5 40 35 0.23 2000 Unit V V V A A A W W/ o C V o o C C (●) Pulse width limited by safe operating area June 1993 1/9 IRF520/FI THERMAL DATA TO-220 R thj-cas e Rthj- amb R th c-s Tl Thermal Resistance Junction-case Max 2.14 62.5 0.5 300 ISOWATT220 4.29...