Fairchild Semiconductor IRF520
N-Channel Power MOSFET
| Part No. | IRF520 |
|---|---|
| Datasheet | IRF520 Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● 9.2A, 100V● rDS(ON) = 0.270Ω
● SOA is Power Dissipation Limited
● Single Pulse Avalanche Energy Rated
● Nanosecond Switching Speeds
● Linear Transfer Characteristics
● High Input Impedance
● Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) ©2002 Fairchild Semiconductor Corporation IRF520 Rev. B IRF520
ABSOLUTE MAXIMUM RATINGS
TC = 25oC, Unless Otherwise Specified Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
