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IRF520 - N-Channel Power MOSFET

Datasheet Summary

Features

  • 9.2A, 100V.
  • rDS(ON) = 0.270Ω.
  • SOA is Power Dissipation Limited.
  • Single Pulse Avalanche Energy Rated.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) ©2002 Fairchild Semiconductor Corporation IRF520 Rev. B IRF520 Absolute M.

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Datasheet Details

Part number IRF520
Manufacturer Fairchild Semiconductor
File Size 89.46 KB
Description N-Channel Power MOSFET
Datasheet download datasheet IRF520 Datasheet
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Full PDF Text Transcription

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Data Sheet January 2002 IRF520 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09594. Ordering Information PART NUMBER PACKAGE BRAND IRF520 TO-220AB IRF520 NOTE: When ordering, use the entire part number. Features • 9.
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