| Part Number | IRF520 Datasheet |
|---|---|
| Manufacturer | International Rectifier |
| Overview | . . |
IRF520 Datasheet PDF
The IRF520 is a Power MOSFET.
| Part Number | IRF520 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF520
·FEATURES ·Typical RDS(on) =0.27Ω ·Avalanche Rugged Technology ·High Current Capability ·Low Gate Charge ·175℃ Operating Temperature ·Mi.
*Typical RDS(on) =0.27Ω *Avalanche Rugged Technology *High Current Capability *Low Gate Charge *175℃ Operating Temperature *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *High Current ,High Speed Switching *DC-DC&DC-AC Converters *Motor Control ,Audi. |
| Part Number | IRF520 Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | Vishay |
| Overview |
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package i.
* Dynamic dV/dt rating * Repetitive avalanche rated Available * 175 °C operating temperature * Fast switching Available * Ease of paralleling * Simple drive requirements Available * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datashe. |
| Part Number | IRF520 Datasheet |
|---|---|
| Description | N-Channel Power MOSFET |
| Manufacturer | STMicroelectronics |
| Overview |
IRF520 IRF520FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
TYPE IRF520 IRF520FI
s s s s s s s
V DSS 100 V 100 V
R DS( on) < 0.27 Ω < 0.27 Ω
ID 10 A 7A
TYPICAL RDS(on) = 0.23 Ω AVALANCHE RU.
Temperature Max. Operating Junction Temperature
o o
Value IRF520FI 100 100 ± 20 10 7 40 70 0.47 -65 to 175 175 7 5 40 35 0.23 2000
Unit V V V A A A W W/ o C V
o o
C C
( *) Pulse width limited by safe operating area June 1993 1/9 IRF520/FI THERMAL DATA TO-220 R thj-cas e Rthj- amb R th c-s T. |