IRF520 Description
IRF520 Data Sheet November 1999 File Number 1574.4 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching...
IRF520 Key Features
- 9.2A, 100V
- rDS(ON) = 0.270Ω
- SOA is Power Dissipation Limited
- Single Pulse Avalanche Energy Rated
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Related Literature
- TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards”