Inchange Semiconductor IRF520
N-Channel MOSFET
| Part No. | IRF520 |
|---|---|
| Datasheet | IRF520 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●Typical RDS(on) =0.27Ω●Avalanche Rugged Technology
●High Current Capability
●Low Gate Charge
●175℃ Operating Temperature
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●DESCRITION
●High Current ,High Speed Switching
●DC-DC&DC-AC Converters
●Motor Control ,Audio Amplifiers
●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 10 A IDM Drain Current-Single Plused 40 A PD Total Dissipation @TC=25℃ 70 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -65~175 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.14 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF520
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITI...